Silavon

The invention relates to an optimised silicon avalanche light-emitting diode (LED) that emits light at a wavelength of approximately 650 nm (red light). The device is based on a silicon PN junction structure designed with strategically doped regions and engineered impurity concentrations to enhance photon generation efficiency. It achieves optical emission through carrier recombination between high-energy electrons and low-energy holes within a precisely defined interaction zone.