Inverse Class-F Power Amplifier

The inverse Class-F power amplifier (PA) comprises an appropriately biased GaN active device, input matching network, and output wave-shaping and matching network. The novel design of the wave-shaping and output matching network ensures minimal overlap of the drain voltage and current waveforms, and also presents the appropriate impedances to the drain of the active device at the fundamental frequency of operation and harmonic frequencies thereof.

In modern wireless communication systems, power amplifiers are one of the main consumers of DC power, and the overall efficiency of existing radio frequency PAs is undesirably low. Innovative design techniques used in the design of the input matching network and the output wave-shaping and matching network have resulted in a PA that provides an exceptionally high power conversion efficiency (PE).

Benefits:

• The innovative design provides higher power conversion efficiency, ensuring optimum conversion of DC input power to RF output power and thus a longer battery lifetime in battery-operated systems.
• The design minimizes the energy losses in the Inverse Class F PA circuit by ensuring that the active device is optimally loaded at the fundamental and harmonic frequencies.
• The designed PA delivers a maximum PE of 95% at an operating frequency of 2.2 GHz.
• A maximum output power of 40.6 dBm at an operating frequency of 2.2 GHz.

Offering:

We are seeking either investors who would like to invest in a new spin-off company focused on manufacturing and supplying inverse Class-F power amplifiers, or a licensee who would like to license and commercialise the product.